2d eigenmode simulations  (Lumerical Solutions)

Journal: Advanced Science

Article Title: Advances in Emerging Photonic Memristive and Memristive‐Like Devices

doi: 10.1002/advs.202105577

Figure Lengend Snippet: a) Schematic illustration of the CDs‐silk memory device. b) Cross‐sectional SEM image of the device structure. c) Schematic diagram of the device structure and the image mapping of the LTM and STM processes. d) Device scheme of the HyQN‐Cl/P3BT C 60 blends and chemical structure of ferroelectric (R)‐(−)‐3‐hydroxlyquinuclidinium chloride, C 60 , and poly(3‐butylthiophene) (P3BT). e) Absorption of HyQN‐Cl/P3BT C 60 blends. f) Device scheme and the photovoltaic switching mechanism in HyQN‐Cl/P3BT C 60 devices. g) Illustration of the GST‐based PCM and measurement scheme. h) FDTD simulations of the power flow from left to right through the region of GST when GST is in both the amorphous and crystalline states. i) Experimental optical transmission of the device with increasing optical probe power. j) Device structure of Azo‐Au NPs based memristor. k) Schematic of AZO functional Au NPs. l) Schematic diagram of the Azo‐Au NPs I) before and II) after UV light irradiation. (a, b) Reproduced with permission. [ ¹²⁴ ] Copyright 2017, Royal Society of Chemistry. (c) Reproduced with permission. [ ²³² ] Copyright 2020, American Chemical Society. (d–f) Reproduced with permission. [ ²⁵¹ ] Copyright 2019, Elsevier B.V. (g–i) Reproduced with permission. [ ²³⁷ ] Copyright 2019, Wiley‐VCH. (j–l) Reproduced with permission. [ ²³⁸ ] Copyright 2020, Royal Society of Chemistry.

Article Snippet: Using Lumerical Solutions, 2D eigenmode and 3D finite‐difference time‐domain (FDTD) simulations are carried out to quantify the field enhancement of the plasmonic nanogap, as shown in Figure .

Techniques: Transmission Assay, Functional Assay, Irradiation

Journal: Science Advances

Article Title: Plasmonic nanogap enhanced phase-change devices with dual electrical-optical functionality

doi: 10.1126/sciadv.aaw2687

Figure Lengend Snippet: ( A ) 3D illustration of device concept. Light is delivered to the nanoscale device via a photonic waveguide, while the Au contacts serve as both device electrodes and plasmonic nanogap to focus incoming light. ( B ) Optical and ( C and D ) SEM images of device after fabrication {scale bar [inset of (C)], 100 nm}. The width of the nanogap was measured to be approximately 50 nm for the devices used. ( E ) Eigenmode simulations of field enhancement inside the plasmonic nanogap when the GST is in the amorphous (top) or crystalline state (region between Au electrodes, bottom). The field enhancement is much stronger when GST is in the amorphous state owing to the significantly lower optical loss. ( F ) FDTD simulation of the transmission of device before and after crystallization. The significant change in the refractive index changes the coupling between the nanogap and waveguide, which reduces reflection from the input waveguide, thereby increasing overall transmission of the device in the crystalline state. ( G ) Experimental measurement of total energy in the waveguide required to achieve a nonvolatile phase transition. The switching threshold was measured to be 16 ± 2 pJ according to a linear fit to the data (black dashed line).

Article Snippet: To quantify the field enhancement of the plasmonic nanogap, we performed both 2D eigenmode and 3D finite-difference time-domain (FDTD) simulations using Lumerical Solutions and plot the field profile cross sections of the device when GST is in the amorphous and crystalline phases (see ).

Techniques: Transmission Assay, Crystallization Assay, Refractive Index, Sublimation